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dc.contributor.authorDogan, Zafer
dc.contributor.authorMehmetoglu, Tural
dc.date.accessioned2025-03-28T07:23:26Z
dc.date.available2025-03-28T07:23:26Z
dc.date.issued2025
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.urihttps://doi.org/10.1007/s11664-024-11655-z
dc.identifier.urihttps://hdl.handle.net/20.500.12450/6110
dc.description.abstractThis study is based on the evaluation of the entropy of solid materials using the more generally appropriate Einstein-Debye approximation. A new efficient analytical expression for entropy depends on the Einstein and Debye temperatures and includes the optical and acoustic effects of the phonon spectrum. Power semiconductors are used as significant key components in industrial applications such as motor drives and converters. As an application, the proposed expression is used to evaluate the entropy of the power electronic semiconductors (SiC\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{SiC}}$$\end{document}) silicon carbide, (Ga2O3\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{Ga}}_{2} {\text{O}}_{3}$$\end{document}) gallium oxide, (AlN\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{AlN}}$$\end{document}) aluminum nitride, and diamond. The advantage of this study is to confirm the accurate calculation of the thermodynamic parameters of materials in a wide temperature range. The accuracy has been analyzed for several experimental and significant computation methods. The results of entropy for the power electronic semiconductors have confirmed that the newly obtained expression is crucial to accurately predict the other crystalline solids. It is seen from the applications that the expression for entropy has yielded accurate results over a wide temperature range.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectEntropyen_US
dc.subjectEinstein-Debye approximationen_US
dc.subjectmotor drivesen_US
dc.subjectheat capacitiesen_US
dc.subjectpower electronicen_US
dc.subjectsemiconductorsen_US
dc.titleA New Unified Analytical Expression for Entropy and its Application to Power Electronic Semiconductorsen_US
dc.typearticleen_US
dc.departmentAmasya Üniversitesien_US
dc.identifier.volume54en_US
dc.identifier.issue3en_US
dc.identifier.startpage2334en_US
dc.identifier.endpage2339en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.scopus2-s2.0-85212878860en_US
dc.identifier.doi10.1007/s11664-024-11655-z
dc.department-temp[Dogan, Zafer] Gaziosmanpasa Univ, Fac Engn & Architecture, Dept Elect & Elect Engn, Tokat, Turkiye; [Mehmetoglu, Tural] Amasya Univ, Tasova Vocat Sch, Amasya, Turkiyeen_US
dc.identifier.wosWOS:001382373100001en_US
dc.snmzKA_WOS_20250328
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US


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