dc.contributor.author | Dogan, Zafer | |
dc.contributor.author | Mehmetoglu, Tural | |
dc.date.accessioned | 2025-03-28T07:23:26Z | |
dc.date.available | 2025-03-28T07:23:26Z | |
dc.date.issued | 2025 | |
dc.identifier.issn | 0361-5235 | |
dc.identifier.issn | 1543-186X | |
dc.identifier.uri | https://doi.org/10.1007/s11664-024-11655-z | |
dc.identifier.uri | https://hdl.handle.net/20.500.12450/6110 | |
dc.description.abstract | This study is based on the evaluation of the entropy of solid materials using the more generally appropriate Einstein-Debye approximation. A new efficient analytical expression for entropy depends on the Einstein and Debye temperatures and includes the optical and acoustic effects of the phonon spectrum. Power semiconductors are used as significant key components in industrial applications such as motor drives and converters. As an application, the proposed expression is used to evaluate the entropy of the power electronic semiconductors (SiC\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{SiC}}$$\end{document}) silicon carbide, (Ga2O3\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{Ga}}_{2} {\text{O}}_{3}$$\end{document}) gallium oxide, (AlN\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{AlN}}$$\end{document}) aluminum nitride, and diamond. The advantage of this study is to confirm the accurate calculation of the thermodynamic parameters of materials in a wide temperature range. The accuracy has been analyzed for several experimental and significant computation methods. The results of entropy for the power electronic semiconductors have confirmed that the newly obtained expression is crucial to accurately predict the other crystalline solids. It is seen from the applications that the expression for entropy has yielded accurate results over a wide temperature range. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Springer | en_US |
dc.relation.ispartof | Journal of Electronic Materials | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Entropy | en_US |
dc.subject | Einstein-Debye approximation | en_US |
dc.subject | motor drives | en_US |
dc.subject | heat capacities | en_US |
dc.subject | power electronic | en_US |
dc.subject | semiconductors | en_US |
dc.title | A New Unified Analytical Expression for Entropy and its Application to Power Electronic Semiconductors | en_US |
dc.type | article | en_US |
dc.department | Amasya Üniversitesi | en_US |
dc.identifier.volume | 54 | en_US |
dc.identifier.issue | 3 | en_US |
dc.identifier.startpage | 2334 | en_US |
dc.identifier.endpage | 2339 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.identifier.scopus | 2-s2.0-85212878860 | en_US |
dc.identifier.doi | 10.1007/s11664-024-11655-z | |
dc.department-temp | [Dogan, Zafer] Gaziosmanpasa Univ, Fac Engn & Architecture, Dept Elect & Elect Engn, Tokat, Turkiye; [Mehmetoglu, Tural] Amasya Univ, Tasova Vocat Sch, Amasya, Turkiye | en_US |
dc.identifier.wos | WOS:001382373100001 | en_US |
dc.snmz | KA_WOS_20250328 | |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |