| dc.contributor.author | Aldirmaz, E. | |
| dc.contributor.author | Guler, M. | |
| dc.contributor.author | Guler, E. | |
| dc.date.accessioned | 2025-03-28T07:23:11Z | |
| dc.date.available | 2025-03-28T07:23:11Z | |
| dc.date.issued | 2025 | |
| dc.identifier.issn | 0925-3467 | |
| dc.identifier.issn | 1873-1252 | |
| dc.identifier.uri | https://doi.org/10.1016/j.optmat.2024.116498 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12450/6041 | |
| dc.description.abstract | The structural, electrical, and photoconductivity features of a metal-semiconductor diode were investigated in this work. A new diode with a Cu-Al-Fe/p-Si/Al structure was produced by coating a Cu-Al-Fe-shaped memory alloy film on p-Si. The microstructural and thermal characteristics of this produced diode were analyzed with scanning electron microscopy (SEM) and differential scanning calorimetry (DSC) where the electrical performance was clarified from Current-Voltage (I-V), Capacity-Voltage (C-V), Conductivity-Voltage (G-V), Capacitytime (C-t), and Current-time (I-t) measurements. In addition, the diode's light sensitivity and photo response properties were analyzed. Due to its structural and electrical properties, the generated diode can be used in optoelectronic applications as a photodiode or optical sensor. | en_US |
| dc.description.sponsorship | Amasya University [FMB-BAP 19-0405, FMB-BAP 20-0437, FMB- BAP 20-0437]; [FMB-BAP 22-0527] | en_US |
| dc.description.sponsorship | All the authors gratefully acknowledge Amasya University for sup-porting this research with project numbers: FMB-BAP 19-0405, FMB-BAP 20-0437 and FMB-BAP 22-0527. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Elsevier | en_US |
| dc.relation.ispartof | Optical Materials | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Schottky diode | en_US |
| dc.subject | Transient photocurrent | en_US |
| dc.subject | Responsivity | en_US |
| dc.subject | F-V measurements | en_US |
| dc.title | Experimental production and investigations of a new Cu-Al-Fe Schottky diode | en_US |
| dc.type | article | en_US |
| dc.department | Amasya Üniversitesi | en_US |
| dc.identifier.volume | 158 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.identifier.doi | 10.1016/j.optmat.2024.116498 | |
| dc.department-temp | [Aldirmaz, E.] Amasya Univ, Dept Phys, TR-05100 Amasya, Turkiye; [Guler, M.; Guler, E.] Ankara Haci Bayram Veli Univ, Dept Phys, TR-06900 Ankara, Turkiye | en_US |
| dc.identifier.wos | WOS:001367901200001 | en_US |
| dc.snmz | KA_WOS_20250328 | |
| dc.indekslendigikaynak | Web of Science | en_US |
