Experimental production and investigations of a new Cu-Al-Fe Schottky diode

Abstract

The structural, electrical, and photoconductivity features of a metal-semiconductor diode were investigated in this work. A new diode with a Cu-Al-Fe/p-Si/Al structure was produced by coating a Cu-Al-Fe-shaped memory alloy film on p-Si. The microstructural and thermal characteristics of this produced diode were analyzed with scanning electron microscopy (SEM) and differential scanning calorimetry (DSC) where the electrical performance was clarified from Current-Voltage (I-V), Capacity-Voltage (C-V), Conductivity-Voltage (G-V), Capacitytime (C-t), and Current-time (I-t) measurements. In addition, the diode's light sensitivity and photo response properties were analyzed. Due to its structural and electrical properties, the generated diode can be used in optoelectronic applications as a photodiode or optical sensor.