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dc.contributor.authorDemirezen, Selcuk
dc.contributor.authorAltindal, Semsettin
dc.contributor.authorAzizian-Kalandaragh, Yashar
dc.contributor.authorAkbas, Ahmet Muhammed
dc.date.accessioned2024-03-12T19:29:40Z
dc.date.available2024-03-12T19:29:40Z
dc.date.issued2022
dc.identifier.issn0031-8949
dc.identifier.issn1402-4896
dc.identifier.urihttps://doi.org/10.1088/1402-4896/ac645f
dc.identifier.urihttps://hdl.handle.net/20.500.12450/2375
dc.description.abstractIn this paper, an organic interlayer, R-s, and N-ss on the transport- mechanisms (TMs), both the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS) (SDs) were performed onto the same Si-wafer in same-conditions. Some electrical parameters ofthem have been investigated. The interface-traps/states (D-it/N-ss) were extracted from the I-F-V-F data as function of energy (E-c-E-ss). These results show that the N-ss for MPS is much-lower than MS SD and increase from the midgap-energy towards the E-c like U-shape. Double-logarithmic I-F-V-F graphs of them show three linear-regimes for low, intermediate, and high-voltages and in these regimes, TM are governed by ohmic, trap/space charge limited currents (TCLCs/SCLCs), respectively. All these results show that (NG:PVP) interlayer leads to an increase in rectifier-ratio (RR = I-F/I-R), BH, R-sh, and decrease in N-ss, reverse saturation-current (I-o), and n. Thus, (NG:PVP) can be successfully utilized as interfacial layer with high performance characteristics.en_US
dc.language.isoengen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofPhysica Scriptaen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/n-Si SDs with/without (NG:PVP) interlayersen_US
dc.subjecta comparison of electrical parametersen_US
dc.subjectI-V and C-V characteristicsen_US
dc.subjectenergy-dependent interface trapsen_US
dc.titleA comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effectsen_US
dc.typearticleen_US
dc.departmentAmasya Üniversitesien_US
dc.authoridDEMIREZEN, SELCUK/0000-0001-7462-0251
dc.identifier.volume97en_US
dc.identifier.issue5en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.scopus2-s2.0-85128896536en_US
dc.identifier.doi10.1088/1402-4896/ac645f
dc.department-temp[Demirezen, Selcuk] Amasya Univ, Sabuncuoglu Serefeddin Vocat Sch Hlth Serv, Amasya, Turkey; [Altindal, Semsettin] Gazi Univ, Fac Sci, Dept Phys, Ankara, Turkey; [Azizian-Kalandaragh, Yashar] Gazi Univ, Fac Sci Appl, Dept Photon, Ankara, Turkey; [Azizian-Kalandaragh, Yashar] Gazi Univ, Photon Applicat & Res Ctr, Ankara, Turkey; [Akbas, Ahmet Muhammed] Gazi Univ, Inst Sci & Technol, Dept Adv Technol, Ankara, Turkeyen_US
dc.identifier.wosWOS:000782505100001en_US
dc.authorwosidAltindal, Semsettin/AGU-1327-2022


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