dc.contributor.author | Demirezen, Selcuk | |
dc.contributor.author | Altindal, Semsettin | |
dc.contributor.author | Azizian-Kalandaragh, Yashar | |
dc.contributor.author | Akbas, Ahmet Muhammed | |
dc.date.accessioned | 2024-03-12T19:29:40Z | |
dc.date.available | 2024-03-12T19:29:40Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 0031-8949 | |
dc.identifier.issn | 1402-4896 | |
dc.identifier.uri | https://doi.org/10.1088/1402-4896/ac645f | |
dc.identifier.uri | https://hdl.handle.net/20.500.12450/2375 | |
dc.description.abstract | In this paper, an organic interlayer, R-s, and N-ss on the transport- mechanisms (TMs), both the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS) (SDs) were performed onto the same Si-wafer in same-conditions. Some electrical parameters ofthem have been investigated. The interface-traps/states (D-it/N-ss) were extracted from the I-F-V-F data as function of energy (E-c-E-ss). These results show that the N-ss for MPS is much-lower than MS SD and increase from the midgap-energy towards the E-c like U-shape. Double-logarithmic I-F-V-F graphs of them show three linear-regimes for low, intermediate, and high-voltages and in these regimes, TM are governed by ohmic, trap/space charge limited currents (TCLCs/SCLCs), respectively. All these results show that (NG:PVP) interlayer leads to an increase in rectifier-ratio (RR = I-F/I-R), BH, R-sh, and decrease in N-ss, reverse saturation-current (I-o), and n. Thus, (NG:PVP) can be successfully utilized as interfacial layer with high performance characteristics. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Iop Publishing Ltd | en_US |
dc.relation.ispartof | Physica Scripta | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Au/n-Si SDs with/without (NG:PVP) interlayers | en_US |
dc.subject | a comparison of electrical parameters | en_US |
dc.subject | I-V and C-V characteristics | en_US |
dc.subject | energy-dependent interface traps | en_US |
dc.title | A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects | en_US |
dc.type | article | en_US |
dc.department | Amasya Üniversitesi | en_US |
dc.authorid | DEMIREZEN, SELCUK/0000-0001-7462-0251 | |
dc.identifier.volume | 97 | en_US |
dc.identifier.issue | 5 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.identifier.scopus | 2-s2.0-85128896536 | en_US |
dc.identifier.doi | 10.1088/1402-4896/ac645f | |
dc.department-temp | [Demirezen, Selcuk] Amasya Univ, Sabuncuoglu Serefeddin Vocat Sch Hlth Serv, Amasya, Turkey; [Altindal, Semsettin] Gazi Univ, Fac Sci, Dept Phys, Ankara, Turkey; [Azizian-Kalandaragh, Yashar] Gazi Univ, Fac Sci Appl, Dept Photon, Ankara, Turkey; [Azizian-Kalandaragh, Yashar] Gazi Univ, Photon Applicat & Res Ctr, Ankara, Turkey; [Akbas, Ahmet Muhammed] Gazi Univ, Inst Sci & Technol, Dept Adv Technol, Ankara, Turkey | en_US |
dc.identifier.wos | WOS:000782505100001 | en_US |
dc.authorwosid | Altindal, Semsettin/AGU-1327-2022 | |