A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects

Abstract

In this paper, an organic interlayer, R-s, and N-ss on the transport- mechanisms (TMs), both the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS) (SDs) were performed onto the same Si-wafer in same-conditions. Some electrical parameters ofthem have been investigated. The interface-traps/states (D-it/N-ss) were extracted from the I-F-V-F data as function of energy (E-c-E-ss). These results show that the N-ss for MPS is much-lower than MS SD and increase from the midgap-energy towards the E-c like U-shape. Double-logarithmic I-F-V-F graphs of them show three linear-regimes for low, intermediate, and high-voltages and in these regimes, TM are governed by ohmic, trap/space charge limited currents (TCLCs/SCLCs), respectively. All these results show that (NG:PVP) interlayer leads to an increase in rectifier-ratio (RR = I-F/I-R), BH, R-sh, and decrease in N-ss, reverse saturation-current (I-o), and n. Thus, (NG:PVP) can be successfully utilized as interfacial layer with high performance characteristics.