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Cu-Al-Mn shape memory alloy based Schottky diode formed on Si

dc.contributor.authorAldirmaz, E.
dc.contributor.authorTataroglu, A.
dc.contributor.authorDere, A.
dc.contributor.authorGuler, M.
dc.contributor.authorGuler, E.
dc.contributor.authorKarabulut, A.
dc.contributor.authorYakuphanoglu, F.
dc.date.accessioned2019-09-01T13:04:07Z
dc.date.available2019-09-01T13:04:07Z
dc.date.issued2019
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.urihttps://dx.doi.org/10.1016/j.physb.2018.12.024
dc.identifier.urihttps://hdl.handle.net/20.500.12450/779
dc.descriptionWOS: 000460635900038en_US
dc.description.abstractIn this work, martensite was made over the wide temperature ranges and the two forms of martensite morphology in Cu85.41Al9.97Mn4.62 shape memory alloy (SMA) were beta' and gamma' martensite phases. The SMA was characterized by the use of X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. In order to fabricate the Schottky diode, Cu-Al-Mn alloy was used as a Schottky contact on p-type Si semiconductor substrate. Some of the crucial parameters for diodes such as ideality factor and barrier height values were obtained from electrical measurements. Illumination-dependent measurements showed that the fabricated device presents the behaviors of photodiode and photoconducting. Besides, it is found that the fabricated diode's structure is sensitive to illumination. Frequency-dependent measurements also indicated that the series resistance and interface state parameters are crucial to affect electrical characteristics of the fabricated diode. The experimental results showed that the fabricated Schottky device could be used in variety of optoelectronic applications.en_US
dc.description.sponsorshipAmasya University [FMB-BAP 18-0342]; Deanship of Scientific Research at King Saud University [RG -1435-059]; Firat University [FF.18.12]en_US
dc.description.sponsorshipThe authors would like to thank the Amasya University for providing the financial support and facilities for this research, under Grant No. FMB-BAP 18-0342. The authors would like to extend their sincere appreciation to the Deanship of Scientific Research at King Saud University for its funding of this research through the Research Group Project no. RG -1435-059. The authors would like to thank the Firat University for providing the financial support and facilities for this research, under Grant No. FF.18.12.en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/j.physb.2018.12.024en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCu-Al-Mnen_US
dc.subjectShape memory alloyen_US
dc.subjectSchottky diodeen_US
dc.subjectIllumination measurementen_US
dc.subjectFrequency dependenceen_US
dc.titleCu-Al-Mn shape memory alloy based Schottky diode formed on Sien_US
dc.typearticleen_US
dc.relation.journalPHYSICA B-CONDENSED MATTERen_US
dc.authoridTataroglu, Adem -- 0000-0003-2074-574Xen_US
dc.identifier.volume560en_US
dc.identifier.startpage261en_US
dc.identifier.endpage266en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.department-temp[Aldirmaz, E.] Amasya Univ, Fac Sci & Arts, Dept Phys, Amasya, Turkey -- [Tataroglu, A.] Gazi Univ, Dept Phys, Fac Sci, Ankara, Turkey -- [Dere, A. -- Yakuphanoglu, F.] Firat Univ, Nanosci & Nanotechnol Lab, Elazig, Turkey -- [Guler, M. -- Guler, E.] Hitit Univ, Fac Sci & Arts, Dept Phys, Corum, Turkey -- [Karabulut, A.] Sinop Univ, Dept Elect & Elect Engn, Fac Engn, Sinop, Turkey -- [Yakuphanoglu, F.] Firat Univ, Dept Phys, Fac Sci, Elazig, Turkeyen_US


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