dc.contributor.author | Canimkurbey, Betul | |
dc.contributor.author | Kir, Merve Nur Kamsiz | |
dc.contributor.author | Eryilmaz, Serpil | |
dc.contributor.author | Gul, Melek | |
dc.date.accessioned | 2025-03-28T07:23:28Z | |
dc.date.available | 2025-03-28T07:23:28Z | |
dc.date.issued | 2024 | |
dc.identifier.issn | 0957-4522 | |
dc.identifier.issn | 1573-482X | |
dc.identifier.uri | https://doi.org/10.1007/s10854-024-12186-3 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12450/6120 | |
dc.description.abstract | Fused alkyne molecules are important in organic semiconductors due to their desirable properties. Here, we report the design and synthesis of a new series of A-pi-D molecules (III-VII) that can serve as mild electron acceptors to generate wide-bandgap p-type small compounds for use in organic field-effect transistors. The incorporation of donor units into fused isophorone frameworks can be used to tune the frontier molecular orbital energies. The electrochemical, optical, and thermal properties of the compounds were characterized. Compound VI, which has a fused phenyl-substituted alkyne moiety, had the highest occupied molecular orbital energy level as determined by optical and electrochemical analysis. Density functional theory calculations revealed that compounds VI and III had lower hole reorganization energy (lambda h) than the corresponding isophorone extended conjugated-based compounds (I-II). Conversely, compounds I and II had lower electron reorganization energy (lambda e) than the corresponding fused alkyne compounds. This is in line with the observed adiabatic ionization potential and electron affinity values. Consequently, devices fabricated with compound VI exhibited high mobility and low threshold voltage. | en_US |
dc.description.sponsorship | Amasya University [FMB-BAP-394/256/20-0455/21-0554/22-0572]; Amasya University Scientific Research Unit | en_US |
dc.description.sponsorship | The authors gratefully acknowledge the Amasya University Scientific Research Unit (FMB-BAP-394/256/20-0455/21-0554/22-0572), for financial support. We appreciate Mr. S. Alper Akbaba for his valuable assistance with the graphics in the preparation of this article. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Springer | en_US |
dc.relation.ispartof | Journal of Materials Science-Materials in Electronics | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Thin-Film Transistors | en_US |
dc.subject | Field-Effect Transistors | en_US |
dc.subject | Semiconductor-Materials | en_US |
dc.subject | Organic Semiconductors | en_US |
dc.subject | Charge-Transport | en_US |
dc.subject | Pi-Stacking | en_US |
dc.subject | Design | en_US |
dc.subject | Deposition | en_US |
dc.subject | Ring | en_US |
dc.title | Novel alkyne chromophore of the isophorone derivatives: synthesis, electrochemical evaluation, DFT, and processable bottom contact/top-gate OFET applications | en_US |
dc.type | article | en_US |
dc.department | Amasya Üniversitesi | en_US |
dc.authorid | Eryilmaz, Serpil/0000-0002-0935-4644 | |
dc.identifier.volume | 35 | en_US |
dc.identifier.issue | 10 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.identifier.scopus | 2-s2.0-85189205653 | en_US |
dc.identifier.doi | 10.1007/s10854-024-12186-3 | |
dc.department-temp | [Canimkurbey, Betul] Amasya Univ, S Serefeddin Hlth Serv Vocat Sch, TR-05100 Amasya, Turkiye; [Kir, Merve Nur Kamsiz] Amasya Univ, Inst Sci, Dept Chem, TR-05100 Amasya, Turkiye; [Eryilmaz, Serpil] Amasya Univ, Fac Arts & Sci, Dept Phys, TR-05100 Amasya, Turkiye; [Gul, Melek] Amasya Univ, Fac Arts & Sci, Dept Chem, TR-05100 Amasya, Turkiye | en_US |
dc.identifier.wos | WOS:001197234400003 | en_US |
dc.snmz | KA_WOS_20250328 | |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |