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dc.contributor.authorCanimkurbey, Betul
dc.contributor.authorKir, Merve Nur Kamsiz
dc.contributor.authorEryilmaz, Serpil
dc.contributor.authorGul, Melek
dc.date.accessioned2025-03-28T07:23:28Z
dc.date.available2025-03-28T07:23:28Z
dc.date.issued2024
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.urihttps://doi.org/10.1007/s10854-024-12186-3
dc.identifier.urihttps://hdl.handle.net/20.500.12450/6120
dc.description.abstractFused alkyne molecules are important in organic semiconductors due to their desirable properties. Here, we report the design and synthesis of a new series of A-pi-D molecules (III-VII) that can serve as mild electron acceptors to generate wide-bandgap p-type small compounds for use in organic field-effect transistors. The incorporation of donor units into fused isophorone frameworks can be used to tune the frontier molecular orbital energies. The electrochemical, optical, and thermal properties of the compounds were characterized. Compound VI, which has a fused phenyl-substituted alkyne moiety, had the highest occupied molecular orbital energy level as determined by optical and electrochemical analysis. Density functional theory calculations revealed that compounds VI and III had lower hole reorganization energy (lambda h) than the corresponding isophorone extended conjugated-based compounds (I-II). Conversely, compounds I and II had lower electron reorganization energy (lambda e) than the corresponding fused alkyne compounds. This is in line with the observed adiabatic ionization potential and electron affinity values. Consequently, devices fabricated with compound VI exhibited high mobility and low threshold voltage.en_US
dc.description.sponsorshipAmasya University [FMB-BAP-394/256/20-0455/21-0554/22-0572]; Amasya University Scientific Research Uniten_US
dc.description.sponsorshipThe authors gratefully acknowledge the Amasya University Scientific Research Unit (FMB-BAP-394/256/20-0455/21-0554/22-0572), for financial support. We appreciate Mr. S. Alper Akbaba for his valuable assistance with the graphics in the preparation of this article.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectThin-Film Transistorsen_US
dc.subjectField-Effect Transistorsen_US
dc.subjectSemiconductor-Materialsen_US
dc.subjectOrganic Semiconductorsen_US
dc.subjectCharge-Transporten_US
dc.subjectPi-Stackingen_US
dc.subjectDesignen_US
dc.subjectDepositionen_US
dc.subjectRingen_US
dc.titleNovel alkyne chromophore of the isophorone derivatives: synthesis, electrochemical evaluation, DFT, and processable bottom contact/top-gate OFET applicationsen_US
dc.typearticleen_US
dc.departmentAmasya Üniversitesien_US
dc.authoridEryilmaz, Serpil/0000-0002-0935-4644
dc.identifier.volume35en_US
dc.identifier.issue10en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.scopus2-s2.0-85189205653en_US
dc.identifier.doi10.1007/s10854-024-12186-3
dc.department-temp[Canimkurbey, Betul] Amasya Univ, S Serefeddin Hlth Serv Vocat Sch, TR-05100 Amasya, Turkiye; [Kir, Merve Nur Kamsiz] Amasya Univ, Inst Sci, Dept Chem, TR-05100 Amasya, Turkiye; [Eryilmaz, Serpil] Amasya Univ, Fac Arts & Sci, Dept Phys, TR-05100 Amasya, Turkiye; [Gul, Melek] Amasya Univ, Fac Arts & Sci, Dept Chem, TR-05100 Amasya, Turkiyeen_US
dc.identifier.wosWOS:001197234400003en_US
dc.snmzKA_WOS_20250328
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US


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