Experimental production and investigations of a new Cu–Al–Fe Schottky diode
Özet
The structural, electrical, and photoconductivity features of a metal-semiconductor diode were investigated in this work. A new diode with a Cu–Al–Fe/p-Si/Al structure was produced by coating a Cu–Al–Fe-shaped memory alloy film on p-Si. The microstructural and thermal characteristics of this produced diode were analyzed with scanning electron microscopy (SEM) and differential scanning calorimetry (DSC) where the electrical performance was clarified from Current-Voltage (I–V), Capacity-Voltage (C–V), Conductivity-Voltage (G-V), Capacity-time (C-t), and Current-time (I-t) measurements. In addition, the diode's light sensitivity and photo response properties were analyzed. Due to its structural and electrical properties, the generated diode can be used in optoelectronic applications as a photodiode or optical sensor. © 2024 Elsevier B.V.
