Optoelectronic characterization of Bi-doped ZnO nanocomposites for Schottky interlayer applications

Abstract

In this study, Bi doped ZnO (Bi:ZnO) nanocomposites mixed with different weight-percentages (0.1, 0.3, 0.5% Bi) content were coated on the p-Si wafer via spin-coating method. Some main electrical and optical parameters of the Schottky structure with Bi doped ZnO interlayer have been evaluated in dark and under different illumi-nation intensities (20, 40, 60, 80, 100 mW/cm2). Optical and electrical features of the Al/(Bi:ZnO)/p-Si (MIS) type PD were investigated and compared via current-voltage/time (I-V/t) and capacitance/conductance-voltage (C/G/w-V) measurements at 1 MHz. Main electrical parameters of them such as ideality factor (n), zero bias barrier height (phi Bo), and series resistance (Rs) were calculated on dark and 100 mV/cm2 illumination intensity. As a result of Ohm's law used in the determination of Rs, contribution rate increases while Rs values decrease. In addition, the electrical admittance measurements were made at 1 MHz. The C-2-V properties and the photo-voltaic property of the diode was analysed according to the results obtained.