Investigating the illumination and deformation effects on the electrical properties of a CuMnZn-based-diode
Özet
The presently investigated diode was produced as a Schottky contact using CuMnZn alloy and p-Si substrate. X-ray diffraction (XRD), scanning electron microscope (SEM), and compression deformation tests were used to determine some properties of the material. The electrical properties of the prepared diode were analyzed with different methods. Photodiode behaviour of the produced diode was studied with Current-Voltage (I-V) characteristics under dark and various light. From the I-V measurements, produced diode exhibited excellent rectifying properties. Also, diode parameters such as ideality factor and barrier height were calculated. The effect of deformation on these parameters was investigated by comparing it with the literature. Current-time (I-t) analyzes of the prepared diode showed that the produced diode was light-sensitive. The electrical characteristic of the diode was investigated at different frequencies with capacitance/conductance-voltage (C/G-V) studies. It was determined that as the frequency increased, the capacitance decreased and the conductivity increased. The produced diode displayed photo-capacitive and photo-conductive properties according to C-V data. The analyzes show that the produced novel diode is very sensitive to exposure illumination. The obtained structural and electrical characterization results confirmed that the prepared diode can be used as a sensor or photodiode in several electronics circuits.
