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dc.contributor.authorKosemen, Zuhal Alpaslan
dc.contributor.authorKosemen, Arif
dc.contributor.authorOzturk, Sadullah
dc.contributor.authorCanimkurbey, Betul
dc.contributor.authorSan, Sait Eren
dc.contributor.authorYerli, Yusuf
dc.contributor.authorTunc, Ali Veysel
dc.date.accessioned2019-09-01T13:05:07Z
dc.date.available2019-09-01T13:05:07Z
dc.date.issued2016
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.urihttps://dx.doi.org/10.1016/j.mee.2016.04.007
dc.identifier.urihttps://hdl.handle.net/20.500.12450/1184
dc.descriptionWOS: 000378561900005en_US
dc.description.abstractIn this work, we have demonstrated how the intrinsic properties of a conjugated polymer can influence the electro-optical characteristics of photo sensitive organic field - effect transistors (Photo-OFETs). Photo-OFETs fabricated with three batches of poly[2-methoxy,5-(3',7'-dimethyl-octyloxy)]-p-phenylene vinylene (MDMO-PPV) were investigated in the scope of our work. Photo-OFETs were fabricated with the polymers, than electrically and electro-optically characterized. It was observed that the channel current and the field-effect mobility increase with increasing polymer molecular weight. Interestingly, the electro-optical characteristics and photo switching properties of the transistors were found to depend on the polydispersity (PDI) of the polymer as well. These results are explained in terms of influences of chain packing, ordering and trap density on the FET switching properties and transistor parameters. (C) 2016 Elsevier B.V. All tights reserved.en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/j.mee.2016.04.007en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPhoto sensitive organic field-effect transistors (Photo-OFETs)en_US
dc.subjectOrganic field-effect transistor (OFET)en_US
dc.subjectMDMO-PPVen_US
dc.subjectMolecular weighten_US
dc.titleEffect of intrinsic polymer properties on the photo sensitive organic field-effect transistors (Photo-OFETs)en_US
dc.typearticleen_US
dc.relation.journalMICROELECTRONIC ENGINEERINGen_US
dc.authoridkosemen, arif -- 0000-0002-7572-7963; Ozturk, Sadullah -- 0000-0002-4851-3062en_US
dc.identifier.volume161en_US
dc.identifier.startpage36en_US
dc.identifier.endpage42en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.department-temp[Kosemen, Zuhal Alpaslan -- Kosemen, Arif -- Canimkurbey, Betul -- San, Sait Eren -- Yerli, Yusuf] Gebze Inst Technol, Dept Phys, Kocaeli, Turkey -- [Kosemen, Zuhal Alpaslan] TUB TAK UME Opt Lab, TR-41470 Gebze, Kocaeli, Turkey -- [Kosemen, Arif] Mus Alparslan Univ, Dept Phys, Mus, Turkey -- [Ozturk, Sadullah] Fatih Sultan Mehmet Vakif Univ, Enginnering Dept, TR-34080 Istanbul, Turkey -- [Canimkurbey, Betul] Amasya Univ, Deparment Phys, Amasya, Turkey -- [Yerli, Yusuf] Yildiz Tech Univ, Dept Phys, Davutpasa, Turkey -- [Tunc, Ali Veysel] Istanbul Bilgi Univ, Dept Energy Syst Engn, TR-34060 Istanbul, Turkeyen_US


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