Yazar "Vural, Ozkan" için listeleme
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Capacitance/Conductance-Voltage-Frequency Characteristics of Au/PVC+TCNQ/p-Si Structures in Wide Frequency Range
Kaya, Ahmet; Tecimer, Huseyin; Vural, Ozkan; Tasdemir, Ibrahim Hudai; Altindal, Semsettin (IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2014)The energy dependence of the interface states (N-ss) and relaxation time (tau) and capture cross section (sigma(p)) of N-ss in (Au/PVC+TCNQ/p-Si) heterojunction were investigated using high-low frequency capacitance ... -
Electrical characteristics of p-Si/TiO2/Al and p-Si/TiO2-Zr/Al Schottky devices
Tasdemir, Ibrahim Hudai; Vural, Ozkan; Dokme, Ilbilge (TAYLOR & FRANCIS LTD, 2016)Electrical devices involve different types of diode in prospective electronics is of great importance. In this study, p-type Si surface was covered with thin film of TiO2 dispersion in H2O to construct p-Si/TiO2/Al Schottky ... -
Single Gaussian distribution of barrier height in Al/PS-ZnPc/p-Si type Schottky barrier diode in temperature range of 120-320 K
Sariyildiz, Asim; Vural, Ozkan; Evecen, Meryem; Altmdal, Semsettin (SPRINGER, 2014)Possible current-transport mechanism in aluminum/polystrene-zincphthalocyanine/ptype silicon Schotky barrier diode (Al/PS-ZnPc/p-Si; SBD), for the forward bias current-voltage (I-V) characteristics were carried out in the ... -
Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and R-s effects on the C-V and G/omega-V characteristics
Vural, Ozkan; Safak, Yasemin; Turut, Abdulmecit; Altindal, Semsettin (ELSEVIER SCIENCE SA, 2012)In order to explain the origin of negative capacitance, we have investigated the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements of the Al/rhodamine-101/n-GaAs Schottky barrier diodes (SBDs) in ...
