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Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and R-s effects on the C-V and G/omega-V characteristics
Vural, Ozkan; Safak, Yasemin; Turut, Abdulmecit; Altindal, Semsettin (ELSEVIER SCIENCE SA, 2012)In order to explain the origin of negative capacitance, we have investigated the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements of the Al/rhodamine-101/n-GaAs Schottky barrier diodes (SBDs) in ...
