Yazar "Demirezen, S." için listeleme
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Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature
Tanrikulu, E. E.; Demirezen, S.; Altindal, A.; Uslu, I. (SPRINGER, 2017)The electrical properties and current-conduction/transport mechanism of Al/(%7 Zn-doped PVA)/p-Si (MPS) structure was investigated by current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/omega-V) ... -
Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range
Demirezen, S.; Cetinkaya, H. G.; Altindal, S. (Springer, 2022)In order to study, in detail, the relationship of effect of NiO doping in ZnO on AC electrical-conductivity (sigma(ac)), complex-permittivity (epsilon*), complex-electric modulus (M*) and interface-states (N-ss), we have ... -
The effect of Mo-doped PVC plus TCNQ interfacial layer on the electrical properties of Au/PVC plus TCNQ/p-Si structures at room temperature
Demirezen, S.; Kaya, A.; Vural, O.; Altindal, S. (ELSEVIER SCI LTD, 2015)The effect of Mo-doped and undoped PVC+TCNQ interfacial layer on electrical characteristics of a Au/PVC+TCNQ/p-Si structure was investigated using current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage ... -
Electrical characteristics and photosensing properties of Al/symmetrical CuPc/p-Si photodiodes
Demirezen, S.; Al-Sehemi, A. G.; Yuzer, A.; Ince, M.; Dere, A.; Al-Ghamdi, A. A.; Yakuphanoglu, F. (Springer, 2022)In this study, the symmetrical copper-phthalocyanine (CuPc) was coated on p-Si wafer by spin-coating method. The photoresponse and electrical properties of the Al/symmetrical CuPc/p-Si structures/diodes were investigated ... -
Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes
Cetinkaya, H. G.; Demirezen, S.; Yeriskin, S. Altindal (Elsevier, 2021)The admittance measurements of the fabricated Au/(%1Ni-PVA)/n-Si (MPS) structure were performed within the frequency range of 5 kHz-5 MHz and voltage range of +/- 3 V with 50 mV steps. C and G values were found to be strong ... -
The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature
Demirezen, S.; Kaya, A.; Altindal, S.; Uslu, I. (SPRINGER, 2017)Au/graphene oxide (GO)-doped PrBaCoO nanoceramic/n-Si capacitors were fabricated and their admittance measurements were carried out between 1 kHz and 1 MHz at room temperature. Experimental results showed that the capacitance ... -
Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature
Kaya, A.; Vural, O.; Tecimer, H.; Demirezen, S.; Altindal, S. (ELSEVIER SCIENCE BV, 2014)Au/PVC + TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant (epsilon', epsilon ''), loss tangent (tan delta), and the real and imaginary parts of the electric modulus (M', M '') and ... -
Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors
Demirezen, S.; Kaya, A.; Yeriskin, S. A.; Balbasi, M.; Uslu, I. (ELSEVIER SCIENCE BV, 2016)In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of epsilon', epsilon', tan delta, electric modulus (M' and M '') and sigma(ac) ... -
Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications
Demirezen, S.; Dere, A.; Cetinkaya, H. G.; Al-Sehemi, A. G.; Al-Ghamdi, A. A.; Yakuphanoglu, F. (Iop Publishing Ltd, 2023)Graphene oxide (GO) doped poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) interlayered Al/p-Si Schottky barrier diodes (SBDs) were manufactured by spin coating technique and investigated for ... -
The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures
Demirezen, S.; Alsac, A. Arslan; Cetinkaya, H. G.; Altindal, S. (Springer, 2023)The current-transport mechanisms (CTMs) and temperature sensitivities (S) of the Al/(In2S3-PVA)/p-Si SBDs have been investigated using I-V measurements between 80 and 320 K. The logI(F)-V-F curves show two linear parts in ... -
On the anomalous peak and negative capacitance in the capacitance-voltage (C-V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure
Tanrikulu, E. E.; Demirezen, S.; Altindal, S.; Uslu, I. (SPRINGER, 2018)The frequency and voltage dependence of the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure were investigated in the wide range of frequency ... -
On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)
Cetinkaya, H. G.; Vahid, A. Feizollahi; Basman, N.; Demirezen, S.; Asar, Y. Safak; Altindal, S. (Springer, 2023)Due to their high dielectric strength, high resistivity, and extended range of band gap, diamond-like carbon films have great potential in the semiconductor device applications. In this study, Cu-doped diamond-like carbon ... -
Optoelectronic characterization of Bi-doped ZnO nanocomposites for Schottky interlayer applications
Demirci, A.; Cetinkaya, H. G.; Durmus, P.; Demirezen, S.; Altindal, S. (Elsevier, 2023)In this study, Bi doped ZnO (Bi:ZnO) nanocomposites mixed with different weight-percentages (0.1, 0.3, 0.5% Bi) content were coated on the p-Si wafer via spin-coating method. Some main electrical and optical parameters of ... -
Series resistance and interface states effects on the C-V and G/w-V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature
Demirezen, S.; Orak, I.; Azizian-Kalandaragh, Y.; Altindal, S. (SPRINGER, 2017)Microwave-assisted method has been used for preparation of Co3O4 nanopowders. Then, Co3O4-doped polyvinyl alcohol (PVA) composites are deposited on n-Si wafer using spin coating method. The main electrical parameters of ... -
The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors
Demirezen, S.; Tanrikulu, E. E.; Altindal, S. (INDIAN ASSOC CULTIVATION SCIENCE, 2019)In this research, PVA (doped with 7% Zn) was sandwiched between Al and p-Si as a polymer interfacial layer. Voltage and frequency effect on the real and imaginary components of complex dielectric constant (epsilon' and ... -
Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures
Demirezen, S.; Cetinkaya, H. G.; Kara, M.; Yakuphanoglu, F.; Altindal, S. (Elsevier Science Sa, 2021)In this study, metal-oxide (NiO:ZnO) nanocomposites mixed with different weight-percentages (2, 10, 20 % NiO) content were coated on the p-Si wafer via spin-coating method. The optical and electrical features of the ... -
Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures
Yeriskin, S. Altindal; Balbasi, M.; Demirezen, S. (INDIAN ASSOC CULTIVATION SCIENCE, 2017)In this study, Au/0.07 graphene-doped PVA/n-Si structures were fabricated and current conduction mechanism in these structures were investigated in the temperature range of 80-380 K through forward bias current-voltage ...
