Yazar "Altindal, Semsettin" için listeleme
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Capacitance/Conductance-Voltage-Frequency Characteristics of Au/PVC+TCNQ/p-Si Structures in Wide Frequency Range
Kaya, Ahmet; Tecimer, Huseyin; Vural, Ozkan; Tasdemir, Ibrahim Hudai; Altindal, Semsettin (IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2014)The energy dependence of the interface states (N-ss) and relaxation time (tau) and capture cross section (sigma(p)) of N-ss in (Au/PVC+TCNQ/p-Si) heterojunction were investigated using high-low frequency capacitance ... -
A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects
Demirezen, Selcuk; Altindal, Semsettin; Azizian-Kalandaragh, Yashar; Akbas, Ahmet Muhammed (Iop Publishing Ltd, 2022)In this paper, an organic interlayer, R-s, and N-ss on the transport- mechanisms (TMs), both the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS) (SDs) were performed onto the same Si-wafer in same-conditions. Some electrical ... -
Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method
Demirezen, Selcuk; Ulusoy, Murat; Durmus, Haziret; Cavusoglu, Halit; Yilmaz, Kurtulus; Altindal, Semsettin (Amer Chemical Soc, 2023)In this study, poly(2-ethylhexyl acrylate) (PEHA) homopolymer and its copolymer combined with acrylic acid P(EHA-co-AA) were employed as interfaces in two separate Schottky structures. First, both interfaces were grown by ... -
Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and R-s effects on the C-V and G/omega-V characteristics
Vural, Ozkan; Safak, Yasemin; Turut, Abdulmecit; Altindal, Semsettin (ELSEVIER SCIENCE SA, 2012)In order to explain the origin of negative capacitance, we have investigated the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements of the Al/rhodamine-101/n-GaAs Schottky barrier diodes (SBDs) in ... -
Vertical CdTe:PVP/p-Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact
Cetinkaya, Hayriye Gokcen; Cicek, Osman; Altindal, Semsettin; Badali, Yosef; Demirezen, Selcuk (Ieee-Inst Electrical Electronics Engineers Inc, 2022)vertical Schottky barrier diode (SBD)-based temperature sensors with the drive modes are a signifi-cant issue with more advantageous than the on-chip sensor. The sensitivity (S) and the current conduction mechanisms (CCMs) ...
