The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature

Abstract

Au/graphene oxide (GO)-doped PrBaCoO nanoceramic/n-Si capacitors were fabricated and their admittance measurements were carried out between 1 kHz and 1 MHz at room temperature. Experimental results showed that the capacitance (C) and conductance (G/w) values are strong functions of frequency and applied bias voltage. C-V plot revealed two distinctive peaks at low frequencies which are located at about 0 and 2 V, such that the first peak disappears towards high frequencies. The energy density distribution profile of the interface/surface states (D (it)/N (ss)) and their relaxation time (tau) and capture cross section (sigma (p)) of the sample were obtained by using the admittance method. In addition, the voltage-dependent profile of N (ss) and resistance were obtained by using low-high frequency capacitance and Nicollian-Brews method, respectively, and they also reveal two distinctive peaks, respectively. Two peaks' behavior in the forward bias C-V, N (ss)-V and R (i)-V plots confirmed the existence of two different localized regions of N (ss) between Si and interfacial layer. The series resistance (R (s)) of the device decreased with increasing frequency from 175 Omega at 1 kHz to 72 Omega at 1 MHz. As a result, the mean value of D (it) was found about 5 x 10(13) eV(-1) cm(-2) which is reasonable for an electronic device.