Ara
Toplam kayıt 16, listelenen: 1-10
Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature
(SPRINGER, 2017)
The electrical properties and current-conduction/transport mechanism of Al/(%7 Zn-doped PVA)/p-Si (MPS) structure was investigated by current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/omega-V) ...
The effect of Mo-doped PVC plus TCNQ interfacial layer on the electrical properties of Au/PVC plus TCNQ/p-Si structures at room temperature
(ELSEVIER SCI LTD, 2015)
The effect of Mo-doped and undoped PVC+TCNQ interfacial layer on electrical characteristics of a Au/PVC+TCNQ/p-Si structure was investigated using current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage ...
Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature
(ELSEVIER SCIENCE BV, 2014)
Au/PVC + TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant (epsilon', epsilon ''), loss tangent (tan delta), and the real and imaginary parts of the electric modulus (M', M '') and ...
Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures
(INDIAN ASSOC CULTIVATION SCIENCE, 2017)
In this study, Au/0.07 graphene-doped PVA/n-Si structures were fabricated and current conduction mechanism in these structures were investigated in the temperature range of 80-380 K through forward bias current-voltage ...
The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors
(INDIAN ASSOC CULTIVATION SCIENCE, 2019)
In this research, PVA (doped with 7% Zn) was sandwiched between Al and p-Si as a polymer interfacial layer. Voltage and frequency effect on the real and imaginary components of complex dielectric constant (epsilon' and ...
On the anomalous peak and negative capacitance in the capacitance-voltage (C-V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure
(SPRINGER, 2018)
The frequency and voltage dependence of the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure were investigated in the wide range of frequency ...
The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature
(SPRINGER, 2017)
Au/graphene oxide (GO)-doped PrBaCoO nanoceramic/n-Si capacitors were fabricated and their admittance measurements were carried out between 1 kHz and 1 MHz at room temperature. Experimental results showed that the capacitance ...
Series resistance and interface states effects on the C-V and G/w-V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature
(SPRINGER, 2017)
Microwave-assisted method has been used for preparation of Co3O4 nanopowders. Then, Co3O4-doped polyvinyl alcohol (PVA) composites are deposited on n-Si wafer using spin coating method. The main electrical parameters of ...
Electrical characteristics and photosensing properties of Al/symmetrical CuPc/p-Si photodiodes
(Springer, 2022)
In this study, the symmetrical copper-phthalocyanine (CuPc) was coated on p-Si wafer by spin-coating method. The photoresponse and electrical properties of the Al/symmetrical CuPc/p-Si structures/diodes were investigated ...
Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range
(Springer, 2022)
In order to study, in detail, the relationship of effect of NiO doping in ZnO on AC electrical-conductivity (sigma(ac)), complex-permittivity (epsilon*), complex-electric modulus (M*) and interface-states (N-ss), we have ...