Ara
Toplam kayıt 16, listelenen: 11-16
The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures
(Springer, 2023)
The current-transport mechanisms (CTMs) and temperature sensitivities (S) of the Al/(In2S3-PVA)/p-Si SBDs have been investigated using I-V measurements between 80 and 320 K. The logI(F)-V-F curves show two linear parts in ...
Optoelectronic characterization of Bi-doped ZnO nanocomposites for Schottky interlayer applications
(Elsevier, 2023)
In this study, Bi doped ZnO (Bi:ZnO) nanocomposites mixed with different weight-percentages (0.1, 0.3, 0.5% Bi) content were coated on the p-Si wafer via spin-coating method. Some main electrical and optical parameters of ...
Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures
(Elsevier Science Sa, 2021)
In this study, metal-oxide (NiO:ZnO) nanocomposites mixed with different weight-percentages (2, 10, 20 % NiO) content were coated on the p-Si wafer via spin-coating method. The optical and electrical features of the ...
Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications
(Iop Publishing Ltd, 2023)
Graphene oxide (GO) doped poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) interlayered Al/p-Si Schottky barrier diodes (SBDs) were manufactured by spin coating technique and investigated for ...
On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)
(Springer, 2023)
Due to their high dielectric strength, high resistivity, and extended range of band gap, diamond-like carbon films have great potential in the semiconductor device applications. In this study, Cu-doped diamond-like carbon ...
Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes
(Elsevier, 2021)
The admittance measurements of the fabricated Au/(%1Ni-PVA)/n-Si (MPS) structure were performed within the frequency range of 5 kHz-5 MHz and voltage range of +/- 3 V with 50 mV steps. C and G values were found to be strong ...