Ara
Toplam kayıt 17, listelenen: 1-10
Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature
(SPRINGER, 2017)
The electrical properties and current-conduction/transport mechanism of Al/(%7 Zn-doped PVA)/p-Si (MPS) structure was investigated by current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/omega-V) ...
Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors
(ELSEVIER SCIENCE BV, 2016)
In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of epsilon', epsilon', tan delta, electric modulus (M' and M '') and sigma(ac) ...
The effect of Mo-doped PVC plus TCNQ interfacial layer on the electrical properties of Au/PVC plus TCNQ/p-Si structures at room temperature
(ELSEVIER SCI LTD, 2015)
The effect of Mo-doped and undoped PVC+TCNQ interfacial layer on electrical characteristics of a Au/PVC+TCNQ/p-Si structure was investigated using current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage ...
Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature
(ELSEVIER SCIENCE BV, 2014)
Au/PVC + TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant (epsilon', epsilon ''), loss tangent (tan delta), and the real and imaginary parts of the electric modulus (M', M '') and ...
Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures
(INDIAN ASSOC CULTIVATION SCIENCE, 2017)
In this study, Au/0.07 graphene-doped PVA/n-Si structures were fabricated and current conduction mechanism in these structures were investigated in the temperature range of 80-380 K through forward bias current-voltage ...
The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors
(INDIAN ASSOC CULTIVATION SCIENCE, 2019)
In this research, PVA (doped with 7% Zn) was sandwiched between Al and p-Si as a polymer interfacial layer. Voltage and frequency effect on the real and imaginary components of complex dielectric constant (epsilon' and ...
On the anomalous peak and negative capacitance in the capacitance-voltage (C-V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure
(SPRINGER, 2018)
The frequency and voltage dependence of the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure were investigated in the wide range of frequency ...
The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature
(SPRINGER, 2017)
Au/graphene oxide (GO)-doped PrBaCoO nanoceramic/n-Si capacitors were fabricated and their admittance measurements were carried out between 1 kHz and 1 MHz at room temperature. Experimental results showed that the capacitance ...
Series resistance and interface states effects on the C-V and G/w-V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature
(SPRINGER, 2017)
Microwave-assisted method has been used for preparation of Co3O4 nanopowders. Then, Co3O4-doped polyvinyl alcohol (PVA) composites are deposited on n-Si wafer using spin coating method. The main electrical parameters of ...
Electrical characteristics and photosensing properties of Al/symmetrical CuPc/p-Si photodiodes
(Springer, 2022)
In this study, the symmetrical copper-phthalocyanine (CuPc) was coated on p-Si wafer by spin-coating method. The photoresponse and electrical properties of the Al/symmetrical CuPc/p-Si structures/diodes were investigated ...